Описание на продукта
Параметри на продукта
Производител
Капацитет
1000 GB
NAND flash тип
TLC
Максимална SSD скорост на четене
540 MB/s
Максимална SSD скорост на запис
520 MB/s
Параметри на продукта
Производител
Капацитет
1000 GB
NAND flash тип
TLC
Максимална SSD скорост на четене
540 MB/s
Максимална SSD скорост на запис
520 MB/s
Описание на продукта
1TB SSD Samsung 850 EVO M. 2
MZ-N5E1T0BW
Unlock Your Computer's Potential
Samsung's 850 EVO series SSD is the industry's #1 best-selling* SSD and is perfect for everyday computing. Powered by Samsung's V-NAND technology, the 850 EVO transforms the everyday computing experience with optimized performance and endurance. Designed to fit desktop PCs, laptops, and ultrabooks, the 850 EVO comes in a wide range of capacities and form factors
Uncompromised Performance
The 850 EVO optimizes performance for your daily computing tasks, boasting sequential write speeds up to 520 MB/s with TurboWrite technology and sequential read speeds up to 540 MB/s. Plus, RAPID mode to further boost performance for up to 2x faster** data processing speeds by utilizing unused PC memory as cache storage.
Type
Product Type
M. 2
Interface
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
Storage
Capacity
1,000 GB **Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Key Features
Sequential Read Speed
Up to 540 MB/s Sequential Read **Performance may vary based on system hardware & configuration
Sequential Write Speed
520
Random Read Speed
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
* Performance may vary based on system hardware & configurationRandom Read (4KB, QD1): Up to 10,000 IOPS Random Read
* Performance may vary based on system hardware & configuration
Random Write Speed
Random Write (4KB, QD32): Up to 89,000 IOPS Random Write *
*Performance may vary based on system hardware & configurationRandom Write (4KB, QD1): Up to 40,000 IOPS Random Write
* Performance may vary based on system hardware & configuration
Memory Speed
Samsung 48L 3D V-NANDSamsung 1 GB LPDDR3
Controller
Samsung MGX Controller
Trim Support
Yes
AES Encryption
AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
S. M. A. R. T. Support
Yes
GC (Garbage Collection)
Auto Garbage Collection Algorithm
WWN Support
World Wide Name supported
Device Sleep Mode Support
Yes
Internal Storage
Yes
Temperature proof
Yes
General
Power Consumption (W)
50 mW
* Actual power consumption may vary depending on system hardware & configurationAverage: 2.2 Watts *Maximum: 2.7 Watts (Burst mode)
* Actual power consumption may vary depending on system hardware & configuration
Reliability (MTBF)
1.5 million hrs Reliability (MTBF)
Form Factor
Product
SATA M. 2
Dimensions (W x D x H)
Product
3.16" x 0.87" x 0.09"
MZ-N5E1T0BW
Unlock Your Computer's Potential
Samsung's 850 EVO series SSD is the industry's #1 best-selling* SSD and is perfect for everyday computing. Powered by Samsung's V-NAND technology, the 850 EVO transforms the everyday computing experience with optimized performance and endurance. Designed to fit desktop PCs, laptops, and ultrabooks, the 850 EVO comes in a wide range of capacities and form factors
Uncompromised Performance
The 850 EVO optimizes performance for your daily computing tasks, boasting sequential write speeds up to 520 MB/s with TurboWrite technology and sequential read speeds up to 540 MB/s. Plus, RAPID mode to further boost performance for up to 2x faster** data processing speeds by utilizing unused PC memory as cache storage.
Type
Product Type
M. 2
Interface
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
Storage
Capacity
1,000 GB **Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Key Features
Sequential Read Speed
Up to 540 MB/s Sequential Read **Performance may vary based on system hardware & configuration
Sequential Write Speed
520
Random Read Speed
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
* Performance may vary based on system hardware & configurationRandom Read (4KB, QD1): Up to 10,000 IOPS Random Read
* Performance may vary based on system hardware & configuration
Random Write Speed
Random Write (4KB, QD32): Up to 89,000 IOPS Random Write *
*Performance may vary based on system hardware & configurationRandom Write (4KB, QD1): Up to 40,000 IOPS Random Write
* Performance may vary based on system hardware & configuration
Memory Speed
Samsung 48L 3D V-NANDSamsung 1 GB LPDDR3
Controller
Samsung MGX Controller
Trim Support
Yes
AES Encryption
AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
S. M. A. R. T. Support
Yes
GC (Garbage Collection)
Auto Garbage Collection Algorithm
WWN Support
World Wide Name supported
Device Sleep Mode Support
Yes
Internal Storage
Yes
Temperature proof
Yes
General
Power Consumption (W)
50 mW
* Actual power consumption may vary depending on system hardware & configurationAverage: 2.2 Watts *Maximum: 2.7 Watts (Burst mode)
* Actual power consumption may vary depending on system hardware & configuration
Reliability (MTBF)
1.5 million hrs Reliability (MTBF)
Form Factor
Product
SATA M. 2
Dimensions (W x D x H)
Product
3.16" x 0.87" x 0.09"
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