Samsung 850 EVO 1TB MZ-N5E1T0BW

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Samsung SSD Samsung 850 EVO Series, 1 TB 3D V-NAND Flash, M. 2 (MZ-N5E1T0BW)

Лизинг.ДДСфактура.Оторизиран сервиз.300лв безплатна доставка

379,00 лв
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Описание
Външен/вътрешен Вътрешен SSD
Капацитет 1000 GB
Максимален пренос на данни 6 Gbit/s
NAND flash тип  TLC
Максимална SSD скорост на четене 540 MB/s
Максимална SSD скорост на запис 520 MB/s

Размери

Ширина 80 мм
Височина 3.5 мм
Дълбочина 22 мм
Тегло 9 г
Оформление M.2

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1TB SSD Samsung 850 EVO M. 2
MZ-N5E1T0BW

Unlock Your Computer's Potential
Samsung's 850 EVO series SSD is the industry's #1 best-selling* SSD and is perfect for everyday computing. Powered by Samsung's V-NAND technology, the 850 EVO transforms the everyday computing experience with optimized performance and endurance. Designed to fit desktop PCs, laptops, and ultrabooks, the 850 EVO comes in a wide range of capacities and form factors

Uncompromised Performance
The 850 EVO optimizes performance for your daily computing tasks, boasting sequential write speeds up to 520 MB/s with TurboWrite technology and sequential read speeds up to 540 MB/s. Plus, RAPID mode to further boost performance for up to 2x faster** data processing speeds by utilizing unused PC memory as cache storage.

Type

Product Type
M. 2

Interface
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface

Storage

Capacity
1,000 GB **Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

Key Features

Sequential Read Speed
Up to 540 MB/s Sequential Read **Performance may vary based on system hardware & configuration

Sequential Write Speed
520

Random Read Speed
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
* Performance may vary based on system hardware & configurationRandom Read (4KB, QD1): Up to 10,000 IOPS Random Read
* Performance may vary based on system hardware & configuration
Random Write Speed
Random Write (4KB, QD32): Up to 89,000 IOPS Random Write *
*Performance may vary based on system hardware & configurationRandom Write (4KB, QD1): Up to 40,000 IOPS Random Write
* Performance may vary based on system hardware & configuration

Memory Speed
Samsung 48L 3D V-NANDSamsung 1 GB LPDDR3

Controller
Samsung MGX Controller

Trim Support
Yes

AES Encryption
AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)

S. M. A. R. T. Support
Yes

GC (Garbage Collection)
Auto Garbage Collection Algorithm

WWN Support
World Wide Name supported

Device Sleep Mode Support
Yes

Internal Storage
Yes

Temperature proof
Yes

General
Power Consumption (W)
50 mW
* Actual power consumption may vary depending on system hardware & configurationAverage: 2.2 Watts *Maximum: 2.7 Watts (Burst mode)
* Actual power consumption may vary depending on system hardware & configuration

Reliability (MTBF)
1.5 million hrs Reliability (MTBF)

Form Factor

Product
SATA M. 2

Dimensions (W x D x H)

Product
3.16" x 0.87" x 0.09"

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Мнения
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