Samsung 850 EVO 1TB mSATA (MZ-M5E1T0BW)

Samsung SSD 850 EVO mSATA 1TB Read 540 MB/sec, Write 520 MB/sec, 3D V-NAND

SSD 1TB Samsung 850 EVO (MZ-M5E1T0BW), mSATA

The Samsung SSD 850 EVO. The top SSD for top professionals.

3D V-NAND Technology
Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.

- TurboWrite Technology
- RAPID Mode
- Enhanced Endurance and Reliability

Short specifications:

PRODUCT TYPE
mSATA

INTERFACE
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface

CAPACITY
1000 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

SEQUENTIAL READ SPEED
Up to 540 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration

SEQUENTIAL WRITE SPEED
Up to 520 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration

MEMORY SPEED
Samsung 32 layer 3D V-NAND
Samsung 1GB Low Power DDR2 SDRAM

Full specifications

Type

PRODUCT TYPE
mSATA

INTERFACE
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
Application

CONSUMER
Client PCs
Storage

CAPACITY
1000 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Key Features

SEQUENTIAL READ SPEED
Up to 540 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration

SEQUENTIAL WRITE SPEED
Up to 520 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration

RANDOM READ SPEED
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
* Performance may vary based on system hardware & configuration

Random Read (4KB, QD1): Up to 10,000 IOPS Random Read
* Performance may vary based on system hardware & configuration

RANDOM WRITE SPEED
Random Write (4KB, QD32): Up to 88,000 IOPS Random Write *
*Performance may vary based on system hardware & configuration

Random Write (4KB, QD1): Up to 40,000 IOPS Random Write
* Performance may vary based on system hardware & configuration

MEMORY SPEED
Samsung 32 layer 3D V-NAND
Samsung 1GB Low Power DDR2 SDRAM

CONTROLLER
Samsung MEX Controller

TRIM SUPPORT
Yes

AES ENCRYPTION
AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)

S. M. A. R. T. SUPPORT
Yes

GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm

WWN SUPPORT
World Wide Name supported

DEVICE SLEEP MODE SUPPORT
Yes

General

POWER CONSUMPTION (W)
50 mWatts
* Actual power consumption may vary depending on system hardware & configuration

Average: 4.3 Watts *Maximum: 5.7 Watts (Burst mode)
* Actual power consumption may vary depending on system hardware & configuration

VOLTAGE
5V ± 5% Allowable voltage

RELIABILITY (MTBF)
1.5 Million Hours Reliability (MTBF)

Environmental Specs
OPERATING TEMPERATURE
32ºF - 158ºF

SHOCK
1,500G & 0.5ms (Half sine)

Form Factor
PRODUCT
mSATA

Dimensions (W x D x H)
PRODUCT
1.18" x 2" x 0.15"

Weight
PRODUCT
0.02 lb.

Software
MANAGEMENT SW
Magician Software

Допълнителна информация: http://www. samsung. com/us/computer/memory-storage/MZ-M5E1T0 BW