Описание на продукта
Параметри на продукта
Производител
Капацитет
512 GB
NAND flash тип
MLC
Максимална SSD скорост на четене
2500 MB/s
Максимална SSD скорост на запис
1500 MB/s
Параметри на продукта
Производител
Капацитет
512 GB
NAND flash тип
MLC
Максимална SSD скорост на четене
2500 MB/s
Максимална SSD скорост на запис
1500 MB/s
Описание на продукта
SSD 512GB Samsung 950 PRO NVMe
Specifications
PRODUCT TYPE
M. 2
INTERFACE
PCIe 3.0 x4 (up to 32Gb/s) NVMe 1.1
CAPACITY
512 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
SEQUENTIAL READ SPEED
Up to 2,500 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration
SEQUENTIAL WRITE SPEED
Up to 1,500 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration
MEMORY SPEED
Samsung V-NAND
Samsung 512 MB Low Power DDR3
Full Specifications
Type
PRODUCT TYPE
M. 2
INTERFACE
PCIe 3.0 x4 (up to 32Gb/s) NVMe 1.1
Application
CONSUMER
Client PCs
Storage
CAPACITY
512 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Key Features
SEQUENTIAL READ SPEED
Up to 2,500 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration
SEQUENTIAL WRITE SPEED
Up to 1,500 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration
RANDOM READ SPEED
Random Read (4KB, QD32):Up to 300,000 IOPS (Thread 4)
Random Read (4KB, QD1):Up to 12,000 IOPS (Thread 1)
RANDOM WRITE SPEED
Random Write (4KB, QD32):Up to 110,000 IOPS (Thread 4) *
Random Write (4KB, QD1):Up to 43,000 IOPS (Thread 1)
MEMORY SPEED
Samsung V-NAND
Samsung 512 MB Low Power DDR3
CONTROLLER
Samsung UBX Controller
POWER CONSUMPTION (W)
*Average: 5.7 Watts, Idle : 70mW
* Actual power consumption may vary depending on system hardware & configuration
RELIABILITY (MTBF)
1.5 Million Hours Reliability (MTBF)
Specifications
PRODUCT TYPE
M. 2
INTERFACE
PCIe 3.0 x4 (up to 32Gb/s) NVMe 1.1
CAPACITY
512 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
SEQUENTIAL READ SPEED
Up to 2,500 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration
SEQUENTIAL WRITE SPEED
Up to 1,500 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration
MEMORY SPEED
Samsung V-NAND
Samsung 512 MB Low Power DDR3
Full Specifications
Type
PRODUCT TYPE
M. 2
INTERFACE
PCIe 3.0 x4 (up to 32Gb/s) NVMe 1.1
Application
CONSUMER
Client PCs
Storage
CAPACITY
512 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Key Features
SEQUENTIAL READ SPEED
Up to 2,500 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration
SEQUENTIAL WRITE SPEED
Up to 1,500 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration
RANDOM READ SPEED
Random Read (4KB, QD32):Up to 300,000 IOPS (Thread 4)
Random Read (4KB, QD1):Up to 12,000 IOPS (Thread 1)
RANDOM WRITE SPEED
Random Write (4KB, QD32):Up to 110,000 IOPS (Thread 4) *
Random Write (4KB, QD1):Up to 43,000 IOPS (Thread 1)
MEMORY SPEED
Samsung V-NAND
Samsung 512 MB Low Power DDR3
CONTROLLER
Samsung UBX Controller
POWER CONSUMPTION (W)
*Average: 5.7 Watts, Idle : 70mW
* Actual power consumption may vary depending on system hardware & configuration
RELIABILITY (MTBF)
1.5 Million Hours Reliability (MTBF)
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